? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c60a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c60a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 120 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c v isol 50/60 hz, rms t = 1 minute leads-to-tab 2500 v~ f c mounting force 11..65 / 2.5..15 n/lb weight 2g ds99370e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 55 a 17 m ? v dss = 100 v i d25 =60 a r ds(on) 17 m ? ? ? ? ? t rr 150 ns n-channel enhancement mode fast intrinsic diode avalanche rated ixfc 110n10p polarhv tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) isolated back surface g = gate d = drain s = source isoplus220 tm (ixfc) e153432 g d s features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l low drain to tab capacitance(<35pf) l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l unclamped inductive switching (uis) rated l fast intrinsic rectifier applications l dc-dc converters l battery chargers l switched-mode and resonant-mode power supplies l dc choppers l ac motor control advantages l easy assembly: no screws, or isolation foils required l space savings l high power density l low collector capacitance to ground (low emi)
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 110n10p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d =55 a, note 1 30 43 s c iss 3550 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1370 pf c rss 440 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 25 ns t d(off) r g = 4 ? (external) 65 ns t f 25 ns q g(on) 110 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 55 a 25 nc q gd 62 nc r thjc 1.25 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 110 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 150 ns q rm v r = 50 v, v gs = 0 v 0.6 c note: pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3.
? 2006 ixys all rights reserved ixfc 110n10p fig. 2. exte nde d output characte ris tics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 220 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 00.511.5 22.533.54 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v d s - volts i d - amperes v gs = 10v 9v 7v 5v 6v 8v fig. 4. r ds(on ) norm alize d to i d = 55a value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 110a i d = 55a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 55a value vs . drain curre nt 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r d s ( o n ) - normalized t j = 25 o c v gs = 10v v gs = 15v - - - - t j = 175 o c fig. 6. drain current vs. case tem perature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 110n10p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20406080100120 q g - nanocoulombs v g s - volts v ds = 50v i d = 55a i g = 10m a fig. 7. input adm ittance 0 25 50 75 100 125 150 175 200 225 250 45 67891011 v g s - volts i d - amperes t j = -40 o c 25 o c 150 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 50 100 150 200 250 300 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source curre nt vs . source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1m s dc t j = 175 o c t c = 25 o c r ds(on) lim it 10m s 25s
? 2006 ixys all rights reserved ixfc 110n10p fig. 13. m axim um transient the rm al re sis tance 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w ixys ref: t_110n10p (6s) 6-15-05-a.xls
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